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Contact Info

Division of Green Energy Engineering
Uiduk University
780-713, Kangdong, Kyongju, South Korea
Tel : +82-54-760-1643    Fax : +82-54-760-1619
Email : jaesung@mail.uu.ac.kr
 

Degrees
Ph. D. Kyoungpook National University (KNU), South Korea, 1995.
M.S. KNU, 1989.
B. Eng. KNU, 1987.

Academic Experience
1998 - present  Uiduk University, South Korea, Professor
2002 - 2003, Post-Doctoral Fellowship in University of Illinois at Urbana-Champaign, IL, USA
2011,Visiting professor in Colorado State University,CO,USA
 
Industrial Experience
1996-1998   Hyundai Electronics Industries Co. Ltd. (HEI), Fellow Engineer
2000 winter   LSI Logic Co.(Milpitas, CA), Visiting Researcher  
 
Consulting Activity
Joint Project with Symbios logic (Colorado) and HEI
 
Principle Areas of Interest
Semiconductor Device, Defects in Semiconductors, Reliability Modeling,
Device Characterization.
Bio sensor and system.
Solar Cell and Optoelectronics
 
 

Recent, Representative Publications


J. S. Lee and Greg Crowell, 　
Matching behaviours of analogue NMOSFET parmeters under hot-carrier streess, 　
Semicond. Sci. Technol. 17(2002) pp.651-654.


Jae-Sung Lee, Joseph W. Lyding, and Karl Hess
Hydrogen-related extrinsic oxide trap generation in ultra thin SiO2 during negative-bias temperature instability stress
2004 IEEE International Reliability Physics Symposium(IRPS), Phoenix, AZ, April, 2004.


Sang-Yun Kim, Kyoung-Rok Han, Byung-Kil Choi, Seong-Ho Kong, Jae-Sung Lee and Jong-Ho Lee, “Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor” Japanese Journal of Applied Physics Vol. 45, No. 3A, 2006, pp. 1467-1470


S. W. Do, Y. H. Lee and J. S. Lee " Study of the Characteristics of HfO2/Hf films Prepared by Atomic Layer Deposition on Silicon, " Journal of the Korean Physical Society Vol. 50/3, 2007. pp.666-669,


Jae Sung Lee, Dae Gab Lee, Seung Woo Do, Yong Hyun Lee (2007) Study for the Reliability of Nano-Scale MOS Devices that Experienced Implantation of Hydrogen or Deuterium at the Back-End of the Process Line, Journal of the Korean Physical Society, 50/5/1561(2007)


J.-S. Lee, "Modeling of Time-Dependent Defect Generation During Constant Voltage Stress for Thin Gate Oxide of Sub-Micron MOSFET" Japanese Journal of Applied Physics, vol. 47, No. 1, pp.19-22, 2008


J.-S. Lee, "Improving performance and reliability of MOS devices using deuterium implantation," Cutting Edge Nanotechnology, In-Tech, ISBN:978-953-7619-93-0, pp.15-32, 2010.


Y. Seo, S. Do, J. Kim, C. Bu, Y. Lee, and J.-S. Lee, "New implantation method to incorporate deuterium into the gate oxide film in the Metal-Oxide-Semiconductor (MOS) structure, The 218th Electrochemical Society Meeting, Las Vegas, October 10-15, 2010


J.-S. Lee and Kelvin L. Lear, "Deuterium-incorporated gate oxide of MOS devices fabricated by using deuterium ion implantation," Journal of the Korean Physical Society, Vol. 60, No.7, pp. 1056-1062, 2012.


Jae-Sung Lee, "Suppression of Gate Oxide Degradation for MOS devices using deuterium ion implantation method, Transaction on electrical and electronic materials," Vol.13, No.4, pp.188-191, 2012.


Jae-Sung Lee, "Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector Journal of Nanoscience and Nanotechnology", Vol. 16, Number 6, June 2016, pp. 6193-6197(5)


Jae-Sung Lee, "Dependence of the electrical characteristics of a metal-polysilicon-metal photodetector on the morphology of polysilicon", Journal of the Korean Physical Society, Vol. 69, No.1, July 2016 pp.60-64


Jae-Sung Lee, "Influence of trap passivation by hydrogen on the electrical properties of polysilicon-based MSM photodetector", Transaction on electrical and electronic materials, vol.18, No.6, pp.316-319, December 25, 2017.


Jae-Sung Lee, "Method for improving electrical property of polysilicon film used to light absorption layer of photodetector", Journal of the Korean Physical Society, Vol. 80, No.7, April 2022 pp.613-618


Jae-Sung Lee, et al, "Effect of ALD Processes on Physical and Electrical Properties of HfO2 Dielectrics for the Surface Passivation of a CMOS Image Sensor Application", IEEE Access, Vol. 10, June 2022 pp. 68724 -68730


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