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1.
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Jaesung Lee, Kwangsoo Kim, Jinsu Han, Jaegab Kim, and Hunsub Park
"Electrical Characteristics of Ti-Salicided n-MOSFETs with Asymmetric Source/Drain
Regions "
International Symposium on VLSI Technology, Systems, and Applications,
Taiwan, June, 1997.
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2.
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ÀÌÀ缺, ¿À¼¼Ã¶, ÀÌ¿ëÇö
¡°Ti0.1W0.9 À§¿¡ ÁõÂøµÈ SiO2 ¹Ú¸·ÀÇ ÈÄ¼Ó ¿Ã³¸®¿¡ ÀÇÇÑ Àü±âÀû Àý¿¬Æ¯¼ºÁ¶»ç.¡°
Çѱ¹¼¾¼ÇÐȸ Çмú´ëȸ ³í¹®Áý, vol. 5, no. 1, 1994.
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3.
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¹ÚÇüÈ£, ÀÌÀ缺, Á¶°æÀÍ, ÀÌ¿ëÇö
¡°XPS chamber ³» in-situ ¿Ã³¸®¿¡ ÀÇÇÑ SiO2/TiW system ÀÇ °è¸é ¹ÝÀÀ ¿¬±¸ ¡±
1994³âµµ Çѱ¹Àç·áÇÐȸ Ãá°èÇмú´ëȸ ³í¹®Áý, 1994.
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4.
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¹ÚÇüÈ£, ÀÌÀ缺, °µ¿±Ô, Á¶°æÀÍ, ÀÌ¿ëÇö
¡°Àý¿¬¹°/±Ý¼Ó system ÀÇ In/Ex-situ ¿Ã³¸®¿¡ ÀÇÇÑ °è¸é»óÅ ºñ±³ ¿¬±¸ ¡±
Çѱ¹ Áø°ø ÇÐȸ Á¦ 7ȸ Çмú ¹ßǥȸ ¹× ÇÑ,ÀÏ CVD ½ÉÆ÷Áö¿ò ³í¹®Áý, 1994.
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5.
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°øµ¿¿í, Á¤È¯Èñ, ÀÌÀ缺, ÀÌ¿ëÇö
¡°ºÒ±ÔÄ¢ÇÑ ¼Ò¿À½º/µå·¹ÀÎ ±Ý¼Ó Á¢ÃËÀ» °®´Â ºñ´ëĪ m-MOSFETÀÇ Àü±âÀû Ư¼º ¹× ¸ðµ¨,¡±
´ëÇÑÀüÀÚ°øÇÐȸ Ãß°è Çмú´ëȸ ³í¹®Áý, vol. 22, no. 2, pp.208-211, 1999.
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6.
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±ÇÇõÁÖ, ÀÌ¿ë¼ö, ÀÌÀ缺, ÀÌ¿ëÇö " PTC, BaTiO3 grain ÀúÇ×°ú ¿ë·® Ư¼º" Çѱ¹¼¾¼ÇÐȸ
Çмú´ëȸ ³í¹®Áý vol. 2, no. 1, 1991.
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7.
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ÀÌÀ缺, ·ùâ¸í, À̼®Çå, ±èâ±Õ, ÀÌ¿ëÇö " Al/¥á-BaTiO3/SiO2/TiW½Ç¸®»çÀÌµå ¾ÈÆ¼Ç»ÁîÀÇ
Á¦Á¶ " Çѱ¹¼¾¼ÇÐȸ Çмú´ëȸ ³í¹®Áý, vol. 6, no. 1, pp.272-279, 1995.
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8.
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·ùâ¸í, ÀÌÀ缺, À̼®Çå, ±èâ±Õ, ÀÌ¿ëÇö, " RF magnetron ½ºÆÛÅ͸µ¹ýÀ¸·Î ÁõÂøÇÑ BaTiO3¹Ú
¸·ÀÇ Á¦Á¶ ¹× ±× Ư¼º," Çѱ¹¼¾¼ÇÐȸ Çмú´ëȸ ³í¹®Áý, vol. 6, no. 1, pp.462-468,
1995.
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9.
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°øµ¿¿í, ÀÌÀ缺, ÀÌ¿ëÇö, "ºñ´ëĪ ¼Ò¿À½º/µå·¹ÀÎÀ» °®´Â NMOSFETÀÇ Àü±âÀû Ư¼º ," ´ëÇÑÀü
ÀÚ°øÇÐȸ Ãß°è Çмú´ëȸ ³í¹®Áý, vol. 21, no. 2, pp.533-536, 1998.
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10.
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ÀÌÀ缺, ÀÌ¿ø±Ô,"¹Ú¸· °ÔÀÌÆ® »êȸ·ÀÇ ¿È¿¡ÀÇÇØ ³ªÅ¸³ª´Â MOSFETÀÇ Æ¯¼º º¯È," ´ëÇÑÀü
ÀÚ°øÇÐȸ Çϰè Çмú´ëȸ ³í¹®Áý, vol. 26, no.1, pp.687-690, 2003
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11.
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Jae-Sung Lee and Won-Gyu Lee, "Experimental Evidence of Hydrogen-Related Oxide Trap
Generation in Ultrathin SiO2 Film During Negative-Bias Temperature Instability
Stress," Á¦11ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, 2004
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