Journal |
1.
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Jaesung Lee, Kwangsoo Kim, Jinsu Han, Jaegab Kim, and Hunsub Park
"Electrical Characteristics of Ti-Salicided n-MOSFETs with Asymmetric Source/Drain
Regions "
International Symposium on VLSI Technology, Systems, and Applications,
Taiwan, June, 1997.
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2.
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S.H. Kim, J.S. Lee, H.C.Choi, and Y.H. Lee
"The fabrication of thin-film bulk acoustic wave resonators employing a
ZnO/Si composite diaphragm structure using porous silicon layer etching,"
IEEE Electron Device Letters, vol. 20, no. 3, pp. 113-115, 1999.
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3.
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J.S. Lee, H.S. Park
" Low voltage coefficient double polysilicon capacitors using thin dielectric
for analog circuit applications,"
Journal of the Korean Physical Society, vol. 34, pp. 330-333, 1999.
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4.
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J.S. Lee, Y.H. Bae, and Y.H.Lee
"A novel Batio3/SiO2-based voltage-programmable link applicable to on-chip
programmable devices,"
Semiconductor Science and Technology, vol.15, no.3, pp.267-269, 2000.
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5.
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J. S. Lee and Y. H. Lee, " Analytical model and characteristics of abnormally
structured MOSFETs," IEEE Trans. on Electron Devices, 2000, vol. 47, no. 12, pp.
2352-2357.
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6.
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J. S. Lee and Greg Crowell, "Matching behaviours of analogue NMOSFET parmeters under
hot-carrier streess," Semicond. Sci. Technol. 17(2002) pp.651-654
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7.
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H. H, Park, J. S. Lee, S. Nahm, and Y. H. Lee "Investication on the interfacial
reaction of SiO2/Ti0.1W0.9 system " Journal of non-crystalline solids, vol. 187,
pp.149-155, 1995.
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8.
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J. S. Lee. Y. H. Lee, and K. Hess, "A Thorough Study of Hydrogen-Related Gate Oxide
Degradation in Deep Submicron MOSFET's with Deuterium Treatment Process," Solid
State Electronics Vol 50/2, 2006, pp 149-154
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9.
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Sang-Yun Kim, Kyoung-Rok Han, Byung-Kil Choi, Seong-Ho Kong, Jae-Sung Lee
and Jong-Ho Lee, “Negative Bias Temperature Instability of Bulk Fin Field Effect
Transistor” Japanese Journal of Applied Physics Vol. 45, No. 3A, 2006, pp. 1467-1470
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10.
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S. W. Do, Y. H. Lee and J. S. Lee " Study of the Characteristics of HfO2/Hf films
Prepared by Atomic Layer Deposition on Silicon, " Journal of the Korean Physical
Society Vol. 50/3, 2007. pp.666-669
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11.
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Jae Sung Lee, Dae Gab Lee, Seung Woo Do, Yong Hyun Lee (2007) Study for the
Reliability of Nano-Scale MOS Devices that Experienced Implantation of Hydrogen or
Deuterium at the Back-End of the Process Line, Journal of the Korean Physical
Society, 50/5/1561(2007)
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