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1.
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Jaesung Lee, Kwangsoo Kim, Jinsu Han, Jaegab Kim, and Hunsub Park
"Electrical Characteristics of Ti-Salicided n-MOSFETs with Asymmetric Source/Drain
Regions "
International Symposium on VLSI Technology, Systems, and Applications,
Taiwan, June, 1997.
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2.
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ÀÌÀ缺
¡°½Ç¸®»çÀÌµå°øÁ¤ÀÌ ¾Æ³¯·Î±×¿ë ´Ù°áÁ¤ ½Ç¸®ÄÜ Ä¿ÆÐ½ÃÅÍÀÇ ¼±ÇüƯ¼º¿¡ ¹ÌÄ¡´Â ¿µÇâ,¡±
À§´ö´ëÇб³ ÀüÀÚ±â¼ú¿¬±¸¼Ò ³í¹®Áö, vol. 2, no. 1, 1999.
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3.
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ÀÌÀ缺, ¹è¿µÈ£
¡°Analytical Model and Characterization of Abnormally Structured MOSFET's¡°
À§´ö´ëÇб³ ÀüÀÚ±â¼ú¿¬±¸¼Ò ³í¹®Áö, vol. 3, no. 1, 2000.
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4.
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ÀÌÀ缺, Á¤¿µÃ¶
¡°ÁýÀûµµ Çâ»óÀ» À§ÇÑ n-MOSFETÀÇ Àü±âÀû Ư¼º ¹× ¸ðµ¨¸µ,¡±
À§´ö´ëÇб³ ÀüÀÚ±â¼ú¿¬±¸¼Ò ³í¹®Áö, vol. 4, no. 2, 2000.
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5.
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ÀÌÀ缺, ±ÇÇõÁÖ, ¼Õ¼±ÀÍ, ÀÌ¿ë¼ö, ÀÌ¿ëÇö "Àç»êÈµÈ ½Ç¸®ÄÜ Áú»êȸ·ÀÇ ÀüÇÏ Æ®·¦ ¹Ðµµ Ư
¼º" °æºÏ´ëÇб³ ÀüÀÚ±â¼ú¿¬±¸Áö Á¦ 13 ±Ç, 1992.
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6.
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ÀÌÀ缺 "Soft breakdown Çö»óÀÌ Deep submicron NMOSFETÀÇ ¼º´É¿¡ ¹ÌÄ¡´Â ¿µÇâ," À§´ö´ëÇÐ
±³ ÀüÀÚ±â¼ú¿¬±¸¼Ò ³í¹®Áö, vol. 4, no. 2, 2003.
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