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1.
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Jaesung Lee, Kwangsoo Kim, Jinsu Han, Jaegab Kim, and Hunsub Park
"Electrical Characteristics of Ti-Salicided n-MOSFETs with Asymmetric Source/Drain
Regions "
International Symposium on VLSI Technology, Systems, and Applications,
Taiwan, June, 1997.
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2.
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ÀÌÀ缺, ¿À¼¼Ã¶, ·ùâ¸í, ÀÌ¿ë¼ö, ÀÌ¿ëÇö
¡°10VÀÌÇÏÀÇ ÇÁ·Î±×·¡¹ÖÀü¾ÐÀ» °®´Â Ta2O5/SiO2·Î ±¸¼ºµÈ ¾ÈƼÈÞÁî ¼ÒÀÚ¡±
Çѱ¹¼¾¼ÇÐȸ ¼¾¼ÇÐȸÁö vol. 4, no. 3, pp. 80-88, 1995.
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3.
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ÀÌÀ缺, ·ùâ¸í, °½Å¿ø, ÀÌÁ¤Èñ, ÀÌ¿ëÇö,
¡°¿Àû ¼ºÀåµÈ ½Ç¸®ÄÜ Áúȸ·À§¿¡ »êÈ ÅºÅ»·ý Ãʹڸ·ÀÇ Çü¼º¡±
´ëÇÑÀüÀÚ°øÇÐȸ vol. 32, no. 11, pp. 35-43, 1995.
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4.
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ÀÌÀ缺, ¹ÚÇüÈ£, ÀÌÁ¤Èñ ÀÌ¿ëÇö
¡°¿Ã³¸®µÈ SiO2/TiW ±¸Á¶ÀÇ °è¸é Ư¼º¡±
´ëÇÑÀüÀÚ°øÇÐȸ vol. 33, no. 3, pp. 117-125, 1996.
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5.
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ÀÌÀ缺, ÀÌ¿ëÇö, "°úÀ× Ti ¼ººÐÀÇ Æ¼Åº»ê ¹Ù·ý°ú ½Ç¸®ÄÜ »êȸ·À¸·Î ±¸¼ºµÈ ¾ÈƼǻÁî,"
´ëÇÑÀüÀÚ°øÇÐȸ. vol. 35, no. 7, pp. 72-78, 1998.
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6.
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ÀÌÀ缺, ÀÌ¿ëÇö, Ãֽÿµ, ÀÌ´öµ¿, "VLSI¸¦ À§ÇÑ ÇöóÁ ¿ÀûÁúȸ·ÀÇ Çü¼º," ÀüÀÚ°øÇÐȸ
³í¹®Áö vol. 26, no. 11, 1989
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7.
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ÀÌ¿µ¹Î, ÀÌÀ缺, ÀÌ¿ëÇö, " BaTiO3/SiO2·Î ±¸¼ºµÈ ¾ÈƼǻÁîÀÇ Àü±âÀû Ư¼º," Çѱ¹¼¾¼ÇÐ
ȸ, vol. 7, no.5, pp.65 - 72, 1998.
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8.
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°øµ¿¿í, ÀÌÀ缺, ³²±âÈ«, ÀÌ¿ëÇö,"ÁýÀûµµ Çâ»óÀ» À§ÇÑ ºñ´ëĪ n-MOSFETÀÇ Àü±âÀû Ư¼º ¹×
¸ðµ¨¸µ," ´ëÇÑÀüÀÚ°øÇÐȸ, 2001, vol. 38, no. 7, pp. 10-18.
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